Standardisation for use of SiC

A 1200 V SiC bare die
(Image: Wolfspeed)

Two new JEDEC standards are aiming to help developers use silicon carbide (SiC) switches, writes Nick Flaherty.

The standards from the JEDEC Solid State Technology Association are JEP203: Guideline for Short Circuit Evaluation in Power Conversion Transistors and JEP204: Catalogue of Stress Procedures for Silicon Carbide Devices for Power Electronic Conversion. These were developed by JEDEC’s JC-70.2 Silicon Carbide Subcommittee to support the growing adoption of SiC power semiconductors.

JEP203 provides guidance for evaluating the short-circuit capability of power MOSFETs, helping engineers improve protection design, test consistency and system robustness in applications such as EVs, industrial drives and energy infrastructure.

JEP204 is a comprehensive reference covering reliability, environmental and ruggedness stress procedures for SiC power devices. The publication gives qualification engineers and device manufacturers a common framework for evaluating long-term reliability and performance, helping accelerate industry alignment and increase confidence in next-generation power electronics.

“JEP203 and JEP204 are landmark guidelines for SiC power conversion, enabling the industry to confidently adopt SiC in demanding power electronic applications. JEP204, in particular, provides a comprehensive framework of best practices for stressing SiC power devices, offering significant value to both users and suppliers. Together, these documents reflect years of industry collaboration and mark a historic milestone in advancing the reliability, safety and standardisation of SiC technology,” said Dr Donald Gajewski, Wolfspeed senior director reliability engineering and chair of the 702_1 Task Group.

“As the power electronics industry accelerates its transition to SiC, standardisation is the catalyst for confidence and scale. The release of JEP203 and JEP204 delivers exactly that: clear guidelines for short-circuit protection design and a unified stress-test framework for long-term SiC reliability. These new documents give engineers and manufacturers the tools to design safer systems, validate long-term reliability and align industry practices,” said Dr Thomas Aichinger, senior principal engineer, SiC technology development, Infineon Technologies and vice-chair of the JC-70.2 subcommittee.

The JC-70 committee has over 70 member companies to help advance the adoption of wide bandgap power technologies.

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