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Wide bandgap materials
The shift to wide bandgap materials isn’t just an incremental upgrade, it is the fundamental enabler for the next generation of high-performance, long-range EVs, reports Nick Flaherty
Wide bandgap (WBG) materials – primarily silicon carbide (SiC) and gallium nitride (GaN), but also gallium oxide (Ga2O3 or GaO) – are defined by their electronic bandgap energy, which is significantly higher than that of traditional silicon at 1.1 eV. Specifically, SiC and GaN possess bandgaps of approximately 3.2 and 3.4 eV, respectively, with GaO at 4.5–4.9 eV.